Military QuickRAM
Up to 90,000 Usable PLD Gates QuickRAM Combining Performance, Density and Embedded RAM

Device Highlights
High Performance & High Density
• Up to 90,000 usable PLD gates with up to 316 I/Os
• 300 MHz 16-bit counters, 400 MHz datapaths, 160+ MHz FIFOs
• 0.35 µm four-layer metal non-volatile CMOS process

High Speed Embedded SRAM
• Up to 22 dual-port RAM modules, organized in user-configurable 1,152 bit blocks
• 5 ns access times, each port independently accessible
• Fast and efficient for FIFO, RAM, and ROM functions

Easy to Use/Fast Development Cycles
• 100% routable with 100% utilization and complete pin-out stability
• Variable-grain logic cells provide high performance and 100% utilization
• Comprehensive design tools include high quality Verilog/VHDL synthesis

Advanced I/O Capabilities
• Interfaces with 3.3 V and 5.0 V devices
• PCI compliant with 3.3 V and 5.0 V busses for -1/-2 speed grades
• Full JTAG boundary scan
• Registered I/O cells with individually controlled clocks and output enables

Up to 316 I/O Pins
• 316 bi-directional input/output pins, PCI-compliant for 5.0 V and 3.3 V buses for -1/-2 speed grades
• Eight high-drive input/distributed network pins

Eight Low-Skew Distributed Networks
• Two array clock/control networks are available to the logic cell flip-flop; clock, set, and reset inputs — each can be driven by an input-only pin
• Six global clock/control networks available to the logic cell; F1, clock, set, and reset inputs and the data input, I/O register clock, reset, and enable inputs as well as the output enable control—each can be driven by an input-only, I/O pin, any logic cell output, or I/O cell feedback

High Performance Silicon
• Input + logic cell + output total delays under 6 ns
• Data path speeds over 400 MHz
• Counter speeds over 300 MHz
• FIFO speeds over 160+ MHz

Military Reliability
• Mil-STD-883 and Mil Temp Ceramic
• Mil Temp Plastic - Guaranteed -55°C to 125°C