Description
The PTF 10160 is an internally matched 85–watt GOLDMOS FET intended for cellular, GSM, D-AMPS and EDGE applications. It operates with 53% efficiency and 16 dB typical gain. Full gold metallization ensures excellent device lifetime and reliability.

• INTERNALLY MATCHED
• Performance at 960 MHz, 26 Volts
    - Output Power = 85 Watts
    - Power Gain = 16 dB Typ
    - Efficiency = 53% Typ
• Full Gold Metallization
• Silicon Nitride Passivated
• Excellent Thermal Stability
• 100% Lot Traceability