PTF10160 데이터 시트보기 (PDF) - Ericsson
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PTF10160 Datasheet PDF : 7 Pages
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PTF 10160
85 Watts, 860–960 MHz
GOLDMOS ® Field Effect Transistor
Description
The PTF 10160 is an internally matched 85–watt GOLDMOS FET
intended for cellular, GSM, D-AMPS and EDGE applications. It oper-
ates with 53% efficiency and 16 dB typical gain. Full gold metalliza-
tion ensures excellent device lifetime and reliability.
• INTERNALLY MATCHED
• Performance at 960 MHz, 26 Volts
- Output Power = 85 Watts
- Power Gain = 16 dB Typ
- Efficiency = 53% Typ
• Full Gold Metallization
• Silicon Nitride Passivated
• Excellent Thermal Stability
• 100% Lot Traceability
Typical Output Power& Efficiency vs. Input Power
120
70
100
80
60
40
20
0
0
60
Efficiency
50
40
VDD = 26 V
IDQ = 700 mA
30
f = 960 MHz
20
10
Output Power
0
1
2
3
4
5
Input Power (Watts)
10160 1234560055A
Package 20248
RF Specifications (100% Tested)
Characteristic
Gain
(VDD = 26 V, POUT = 85 W, IDQ = 700 mA, f = 960 MHz)
Power Output at 1 dB Compression
(VDD = 26 V, IDQ = 700 mA, f = 960 MHz)
Drain Efficiency
(VDD = 26 V, POUT = 85 W, IDQ = 700 mA, f = 960 MHz)
Load Mismatch Tolerance
(VDD = 26 V, POUT = 85 W, IDQ = 700 mA, f = 960 MHz
—all phase angles at frequency of test)
All published data at TCASE = 25°C unless otherwise indicated.
Symbol Min
Gpe
15
P-1dB
85
h
50
Y
—
Typ
16
90
53
—
Max Units
—
dB
—
Watts
—
%
5:1
—
e
1
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