제조사
NXP Semiconductors.
General description
PNP low VCEsat Breakthrough In Small Signal (BISS) transistor in a SOT223 (SC-73) medium power Surface-Mounted Device (SMD) plastic package.
NPN complement: PBSS4041NZ.
FEATUREs and benefits
■ Very low collector-emitter saturation voltage VCEsat
■ High collector current capability IC and ICM
■ High collector current gain (hFE) at high IC
■ High energy efficiency due to less heat generation
■ AEC-Q101 qualified
■ Smaller required Printed-Circuit Board (PCB) area than for conventional transistors
APPLICATIONs
■ Loadswitch
■ Battery-driven devices
■ Power management
■ Charging circuits
■ Power switches (e.g. motors, fans)
60 V, 5.7 A PNP low VCEsat (BISS) transistor
Nexperia B.V. All rights reserved
60 V, 5 A PNP low VCEsat (BISS) transistor
Nexperia B.V. All rights reserved
60 V, 1 A PNP low VCEsat (BISS) transistor
Nexperia B.V. All rights reserved
60 V, 1 A PNP low VCEsat (BISS) transistor
Nexperia B.V. All rights reserved
60 V, 5 A PNP low VCEsat (BISS) transistor
NXP Semiconductors.
60 V, 5 A PNP low VCEsat (BISS) transistor
Nexperia B.V. All rights reserved
60 V, 2.7 A PNP low VCEsat (BISS) transistor
NXP Semiconductors.
60 V, 5 A PNP low VCEsat (BISS) transistor
NXP Semiconductors.
60 V, 1 A PNP low VCEsat (BISS) transistor
NXP Semiconductors.
60 V, 1 A PNP low VCEsat (BISS) transistor
NXP Semiconductors.