제조사
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NXP Semiconductors.
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General description
PNP low VCEsat Breakthrough In Small Signal (BISS) transistor in a SOT23 (TO-236AB) small Surface-Mounted Device (SMD) plastic package.
NPN complement: PBSS4041NT.
FEATUREs and benefits
■ Very low collector-emitter saturation voltage VCEsat
■ High collector current capability IC and ICM
■ High collector current gain (hFE) at high IC
■ High energy efficiency due to less heat generation
■ AEC-Q101 qualified
■ Smaller required Printed-Circuit Board (PCB) area than for conventional transistors
APPLICATIONs
■ Loadswitch
■ Battery-driven devices
■ Power management
■ Charging circuits
■ Power switches (e.g. motors, fans)
60 V, 2.7 A PNP low VCEsat (BISS) transistor
Nexperia B.V. All rights reserved
100 V, 2.7 A PNP low VCEsat (BISS) transistor
NXP Semiconductors.
100 V, 2.7 A PNP low VCEsat (BISS) transistor
Nexperia B.V. All rights reserved
30 V, 2.7 A PNP low VCEsat (BISS) transistor
NXP Semiconductors.
30 V, 2.7 A PNP low VCEsat (BISS) transistor
Nexperia B.V. All rights reserved
50 V, 2.7 A PNP/PNP low VCEsat(BISS) transistor
NXP Semiconductors.
50 V, 2.7 A PNP/PNP low VCEsat (BISS) transistor
NXP Semiconductors.
50 V, 2.7 A PNP/PNP low VCEsat (BISS) transistor
Nexperia B.V. All rights reserved
50 V, 2.7 A PNP/PNP low VCEsat (BISS) transistor ( Rev : V2 )
NXP Semiconductors.
60 V, 5 A PNP low VCEsat (BISS) transistor
Nexperia B.V. All rights reserved