General description
NPN low VCEsat Breakthrough In Small Signal (BISS) transistor in a leadless ultra small DFN1006B-3 (SOT883B) Surface-Mounted Device (SMD) plastic package.
PNP complement: PBSS3540MB.

FEATUREs and benefits
■ Leadless ultra small SMD plastic
   package
■ Low package height of 0.37 mm
■ Low collector-emitter saturation
   voltage VCEsat
■ High collector current capability IC and
   ICM
■ High efficiency due to less heat
   generation
■ AEC-Q101 qualified
■ Reduced Printed-Circuit Board (PCB)
   requirements

APPLICATIONs
■ DC-to-DC conversion
■ Supply line switching
■ Battery charger
■ LCD backlighting
■ Drivers in low supply voltage
   applications (e.g. lamps and LEDs)