General description
NPN low VCEsat Breakthrough In Small Signal (BISS) transistor in a leadless ultra small SOT883B Surface-Mounted Device (SMD) plastic package.

PNP complement: PBSS3515MB.

FEATUREs and benefits
◾ Leadless ultra small SMD plastic
   package
◾ Low package height of 0.37 mm
◾ Low collector-emitter saturation
   voltage VCEsat
◾ High collector current capability IC and
   ICM
◾ High efficiency due to less heat
   generation
◾ AEC-Q101 qualified
◾ Reduced Printed-Circuit Board (PCB)
   requirements

APPLICATIONs
◾ DC-to-DC conversion
◾ Supply line switching
◾ Battery charger
◾ LCD backlighting
◾ Driver in low supply voltage
   applications (e.g. lamps and LEDs)