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NXP Semiconductors.
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General description
NPN high-voltage low VCEsat Breakthrough In Small Signal (BISS) transistor in a small SOT23 (TO-236AB) Surface-Mounted Device (SMD) plastic package.
PNP complement: PBHV9115T.
FEATUREs
■ High voltage
■ Low collector-emitter saturation voltage VCEsat
■ High collector current capability IC and ICM
■ High collector current gain (hFE) at high IC
■ AEC-Q101 qualified
■ Small SMD plastic package
APPLICATIONs
■ LED driver for LED chain module
■ LCD backlighting
■ High Intensity Discharge (HID) front lighting
■ Automotive motor management
■ Hook switch for wired telecom
■ Switch Mode Power Supply (SMPS)
150 V, 1 A NPN high-voltage low VCEsat (BISS) transistor
NXP Semiconductors.
150 V, 1 A NPN high-voltage low VCEsat (BISS) transistor
Nexperia B.V. All rights reserved
150 V, 1 A NPN high-voltage low VCEsat BISS transistor
Nexperia B.V. All rights reserved
150 V, 1 A PNP high-voltage low VCEsat (BISS) transistor
NXP Semiconductors.
150 V, 1 A PNP high-voltage low VCEsat BISS transistor
Nexperia B.V. All rights reserved
150 V, 1 A PNP high-voltage low VCEsat (BISS) transistor
NXP Semiconductors.
150 V, 1 A PNP high-voltage low VCEsat (BISS) transistor
NXP Semiconductors.
150 V, 2 A NPN high-voltage low VCEsat (BISS) transistor
NXP Semiconductors.
150 V, 2 A NPN high-voltage low VCEsat (BISS) transistor
Nexperia B.V. All rights reserved
180 V, 1 A NPN high-voltage low VCEsat (BISS) transistor
Nexperia B.V. All rights reserved