PBHV8115T 데이터 시트보기 (PDF) - NXP Semiconductors.
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PBHV8115T Datasheet PDF : 11 Pages
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NXP Semiconductors
PBHV8115T
150 V, 1 A NPN high-voltage low VCEsat (BISS) transistor
6. Thermal characteristics
Table 6.
Symbol
Rth(j-a)
Rth(j-sp)
Thermal characteristics
Parameter
thermal resistance from
junction to ambient
thermal resistance from
junction to solder point
Conditions
in free air
Min Typ Max Unit
[1] -
-
417 K/W
-
-
70 K/W
[1] Device mounted on an FR4 PCB, single-sided copper, tin-plated and standard footprint.
103
Zth(j-a)
(K/W)
102
duty cycle = 1
0.75
0.5
0.33
0.2
0.1
0.05
10 0.02
0.01
10
006aab151
10−1
10−5
10−4
10−3
10−2
10−1
1
10
102
103
tp (s)
FR4 PCB, standard footprint
Fig 2. Transient thermal impedance from junction to ambient as a function of pulse duration; typical values
PBHV8115T_2
Product data sheet
Rev. 02 — 9 December 2008
© NXP B.V. 2008. All rights reserved.
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