P10N60 데이터시트 - PANJIT INTERNATIONAL
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P10N60
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PANJIT INTERNATIONAL
FEATURES
• 10A , 600V, RDS(ON)=1.0Ω@VGS=10V, ID=5.0A
• Low ON Resistance
• Fast Switching
• Low Gate Charge
• Fully Characterized Avalanche Voltage and Current
• Specially Desigened for AC Adapter, Battery Charge and SMPS
• In compliance with EU RoHs 2002/95/EC Directives
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8A 600V N-channel Enhancement Mode Power MOSFET
Jiangsu Donghai Semiconductor Technology Co.,Ltd
8A 600V N-channel Enhancement Mode Power MOSFET
Jiangsu Donghai Semiconductor Technology Co.,Ltd
7A 600V N-channel Enhancement Mode Power MOSFET
Jiangsu Donghai Semiconductor Technology Co.,Ltd
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