P10N60 데이터 시트보기 (PDF) - PANJIT INTERNATIONAL

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P10N60

600V N-Channel Enhancement Mode MOSFET

PANJIT INTERNATIONAL 

PJP10N60 / PJF10N60

Typical Characteristics Curves ( Ta=25℃, unless otherwise noted)

12

ID =10A

10

VDS=480V

8

VDS=300V

VDS=120V

6

4

2

0

0 5 10 15 20 25 30 35 40 45

Qg - Gate Charge (nC)

Fig. 7 Gate Charge Waveform

1.2

ID = 250µA

1.1

1

0.9

0.8

-50 -25 0 25 50 75 100 125 150

TJ - Junction Temperature (oC)

Fig.9 Breakdown Voltage vs Junction Temperature

10 VGS = 0V

1

TJ = 125oC

0.1

25oC

-55oC

0.01

0.2 0.4 0.6 0.8 1 1.2 1.4

VSD - Source-to-Drain Voltage (V)

Fig.8 Source-Drain Diode Forward Voltage

March 31,2010-REV.00

PAGE. 4

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