Description:
The NTE243 (NPN) and NTE244 (PNP) are silicon complementary Darlington transistors in a TO3 type case designed for general–purpose amplifier and low–frequency switching applications.

FEATUREs:
• High DC Current Gain: hFE = 3000 Typ @ IC = 4A
• Collector–Emitter Sustaining Voltage: VCEO(sus) = 80V Min @ 100mA
• Low Collector–Emitter Saturation Voltage:
   VCE(sat) = 2V Max @ IC = 4A
               = 3V Max @ IC = 8A
• Monolithic Construction with Built–In Base–Emitter Shunt Resistors