Description:
The NTE251 (NPN) and NTE252 (PNP) are silicon complementary Darlington transistors in a TO3 type case designed for general–purpose amplifier and low–frequency switching applications.

FEATUREs:
• High DC Current Gain @ IC = 10A:
   hFE = 2400 Typ (NTE251)
   hFE = 4000 Typ (NTE252)
• Collector–Emitter Sustaining Voltage: VCEO(sus) = 100V Min
• Monolithic Construction with Built–In Base–Emitter Shunt Resistors