NTE188 데이터시트 - NTE Electronics
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NTE188
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NTE Electronics
Description:
The NTE188 (NPN) and NTE189 (PNP) are complementary silicon transistors in a TO202N type package designed for general purpose, high voltage amplifier and driver applications.
FEATUREs:
• High Collector–Emitter Breakdown Voltage: V(BR)CEO = 80V @ IC = 1mA
• High Power Dissipation: PD = 10W @ TC = +25°C
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Silicon Complementary Transistors High Voltage, High Current Capacity Driver
NTE Electronics
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