NTE188 데이터 시트보기 (PDF) - NTE Electronics

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NTE188

Silicon Complementary Transistors High Voltage Amplifier & Driver

NTE Electronics 

Electrical Characteristics (Cont’d): (TA = +25°C unless otherwise specified)

Parameter

Symbol

Test Conditions

Min Typ Max Unit

OFF Characteristics (Note 3)

DC Current Gain

NTE188

hFE

IC = 50mA, VCE = 1V

60 110 –

IC = 250mA, VCE = 1V

30 65 –

NTE189

IC = 50mA, VCE = 1V

IC = 50mA, VCE = 1V

IC = 50mA, VCE = 1V

– 33 –

80 160 –

50 130 –

IC = 50mA, VCE = 1V

–

8

–

Collector–Emitter Saturation Voltage

NTE188

VCE(sat)

IC = 250mA, IB = 10mA

IC = 250mA, IB = 25mA

– 0.18 0.4 V

– 0.1 –

V

NTE189

IC = 250mA, IB = 10mA

– 0.22 0.5 V

IC = 250mA, IB = 25mA

– 0.15 –

V

Base–Emitter ON Voltage

NTE188

VBE(on)

IC = 250mA, VCE = 5V

– 0.76 1.2 V

NTE189

– 0.78 1.2 V

Small–Signal Characteristics

Current Gain–Bandwidth Product

NTE188

NTE189

fT

IC = 250mA, VCE = 5V, f = 100MHz, 50 150 – MHz

Note 2

50 100 – MHz

Output Capacitance

NTE188

NTE189

Cob

VCB = 10V, IE = 0, f = 100MHz

–

6 12 pF

– 10 15 pF

Note 2. Pulse Test: Pulse Width ≤ 300µs, Duty Cycle ≤ 2%.

.160

(4.06)

.380 (9.65) Max

.050 (1.27)

.100 (2.54)

.280 (7.25) Max

.128 (3.28) Dia

.218

(5.55)

.475

(12.0)

Min

EBC

.995

(25.3)

.100 (2.54)

.200 (5.08)

Collector Connected to Tab

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