DESCRIPTION
NECs NESG2101M16 is fabricated using NECʼs high voltage  Silicon Germanium process (UHS2-HV), and is designed for  a wide range of applications including low noise amplifiers,  medium power amplifiers, and oscillators

FEATURES
• HIGH BREAKDOWN VOLTAGE SiGe TECHNOLOGY
   VCEO = 5 V (Absolute Maximum)
• HIGH OUTPUT POWER:
   P1dB = 21 dBm at 2 GHz
• LOW NOISE FIGURE:
   NF = 0.9 dB at 2 GHz
   NF = 0.6 dB at 1 GHz
• HIGH MAXIMUM STABLE POWER GAIN:
   MSG = 17 dB at 2 GHz
• LOW PROFILE M16 PACKAGE:
   6-pin lead-less minimold