제조사
California Eastern Laboratories.
DESCRIPTION
NECs NESG2021M05 is fabricated using NECʼs high voltage Silicon Germanium process (UHS2-HV), and is designed for a wide range of applications including low noise amplifiers, medium power amplifiers, and oscillators.
NECʼs low profile, flat lead style M05 Package provides high frequency performance for compact wireless designs.
FEATURES
• HIGH BREAKDOWN VOLTAGE SiGe TECHNOLOGY
VCEO = 5 V (Absolute Maximum)
• LOW NOISE FIGURE:
NF = 0.9 dB at 2 GHz
NF = 1.3 dB at 5.2 GHz
• HIGH MAXIMUM STABLE GAIN:
MSG = 22.5 dB at 2 GHz
• LOW PROFILE M05 PACKAGE:
SOT-343 footprint, with a height of only 0.59 mm
Flat lead style for better RF performance
• Pb Free
NEC's NPN SiGe HIGH FREQUENCY TRANSISTOR
NEC => Renesas Technology
NEC's NPN SiGe HIGH FREQUENCY TRANSISTOR
California Eastern Laboratories.
NEC's NPN SiGe HIGH FREQUENCY TRANSISTOR
NEC => Renesas Technology
NEC's NPN SiGe HIGH FREQUENCY TRANSISTOR
California Micro Devices => Onsemi
NEC's NPN SiGe HIGH FREQUENCY TRANSISTOR ( Rev : 2004 )
California Eastern Laboratories.
NEC's NPN SiGe HIGH FREQUENCY TRANSISTOR
NEC => Renesas Technology
NEC's NPN SiGe HIGH FREQUENCY TRANSISTOR
California Eastern Laboratories.
NEC's NPN SiGe HIGH FREQUENCY TRANSISTOR
California Eastern Laboratories.
NEC's NPN SiGe HIGH FREQUENCY TRANSISTOR
California Eastern Laboratories.
NEC's NPN SILICON HIGH FREQUENCY TRANSISTOR
California Eastern Laboratories.