제조사
STMicroelectronics
Description
The device in manufactured in low voltage PNP Planar Technology by using a “Base Island” layout. The resulting transistor shows exceptional high gain performance coupled with very low saturation voltage.
General features
■ Very low Collector to Emitter saturation voltage
■ D.C. Current gain, hFE >100
■ 3A continuous collector current
■ 40V breakdown voltage (V(BR)CER)
■ SOT-223 plastic package for surface mounting circuits
■ Available in tape & reel packing
■ In compliance with the 2002/93/EC European Directive
APPLICATIONs
■ Power management in portable equipment
■ Voltage regulation in bias supply circuits
■ Switching regulator in battery charger applications
■ Heavy load driver
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