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MT28F160C34 데이터시트 - Micron Technology

MT28F160C34 image

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MT28F160C34

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28 Pages

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Micron
Micron Technology Micron

GENERAL DESCRIPTION
The MT28F160C34 is a nonvolatile, electrically blockerasable (flash), programmable memory containing 16,777,216 bits organized as 1,048,576 words (16 bits). The MT28F160C34 is manufactured on 0.22µm process technology in a 46-ball FBGA package.


FEATURES
• Thirty-nine erase blocks:
    Eight 4K-word parameter blocks
    Thirty-one 32K-word main memory blocks
• VCC, VCCQ and VPP voltages:
    3.3V ±5% VCC
    3.3V ±5% VCCQ
    1.65V–3.465V and 12V VPP
• Address access times:
    90ns at 3.3V ±5%
• Low power consumption:
    Standby and deep power-down mode < 1µA (typical ICC)
    Automatic power saving feature (APS mode)
• Enhanced WRITE/ERASE SUSPEND (1µs typical)
• 128-bit OTP area for security purposes
• Industry-standard command set compatibility
• Software/hardware block protection

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부품명
상세내역
PDF
제조사
FLASH MEMORY
Samsung
FLASH MEMORY
Samsung
FLASH MEMORY
Samsung
FLASH MEMORY
Micron Technology
FLASH MEMORY
Samsung
FLASH MEMORY
Samsung
FLASH MEMORY
Micron Technology
FLASH MEMORY
Micron Technology
FLASH MEMORY
Samsung
FLASH MEMORY
Samsung

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