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K9F1208B0C 데이터시트 - Samsung

K9F1208B0C image

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K9F1208B0C

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Samsung
Samsung Samsung

GENERAL DESCRIPTION
Offered in 64Mx8bits, the K9F1208X0C is 512Mbit with spare 16Mbit capacity. The device is offered in 1.8V, 2.7V and 3.3V Vcc. Its NAND cell provides the most cost-effective solutIon for the solid state mass storage market. A program operation can be performed in typical 200µs on the 528-bytes and an erase operation can be performed in typical 2ms on a 16K-bytes block. Data in the page can be read out at 42ns cycle time per byte. The I/O pins serve as the ports for address and data input/output as well as command input.


FEATURES
•Voltage Supply
- 1.8V Device(K9F1208R0C) : 1.65V ~ 1.95V
- 2.7V Device(K9F1208B0C) : 2.5V ~ 2.9V
- 3.3V Device(K9F1208U0C) : 2.7V ~ 3.6V
•Organization
- Memory Cell Array : (64M + 2M) x 8bits
- Data Register : (512 + 16) x 8bits
•Automatic Program and Erase
- Page Program : (512 + 16) x 8bits
- Block Erase : (16K + 512)Bytes
•Page Read Operation
- Page Size : (512 + 16)Bytes
- Random Access : 15µs(Max.)
- Serial Page Access : 42ns(Min.)
•Fast Write Cycle Time
- Program time : 200µs(Typ.)
- Block Erase Time : 2ms(Typ.)
•Command/Address/Data Multiplexed I/O Port
•Hardware Data Protection
- Program/Erase Lockout During Power Transitions
•Reliable CMOS Floating-Gate Technology
- Endurance : 100K Program/Erase Cycles (with 1bit/512Byte ECC)
- Data Retention : 10 Years
•Command Register Operation
•Unique ID for Copyright Protection
•Package
- K9F1208U0C-PCB0/PIB0 : Pb-Free Package 48 - Pin TSOP I (12 x 20 / 0.5 mm pitch)
- K9F1208X0C-JCB0/JIB0: Pb-Free Package 63-Ball FBGA(8.5 x 13 x 1.2mmt)
- K9F1208B0C-PCB0/PIB0 : Pb-Free Package 48 - Pin TSOP I (12 x 20 / 0.5 mm pitch)

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부품명
상세내역
PDF
제조사
FLASH MEMORY
Samsung
FLASH MEMORY
Samsung
FLASH MEMORY
Samsung
FLASH MEMORY
Micron Technology
FLASH MEMORY
Samsung
FLASH MEMORY
Samsung
FLASH MEMORY
Micron Technology
FLASH MEMORY
Micron Technology
FLASH MEMORY
Samsung
FLASH MEMORY
Micron Technology

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