MGF1923 데이터시트 - MITSUBISHI ELECTRIC
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MGF1923
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MITSUBISHI ELECTRIC
DESCRIPTION
The MGF1923, low noise GaAs FET with an N-Channel Schottky gate, is designed for use in S to Ku band amplifiers. The MGF1923 is mounted in the super 12 tape.
FEATURES
● High linear power gain
GLP = 11dB (Typ.) @ 12GHz
● High output at power 1dB gain compression
P1dB = 13dBm (Typ.) @ 12GHz
APPLICATION
S to Ku band amplifiers
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