DESCRIPTION
The MGF0918A GaAs FET with an N-channel schottky Gate, is designed for use UHF band amplifiers.

FEATURES
● High output power
   Po=27dBm(TYP.) @f=1.9GHz,Pin=8dBm
● High power gain
   Gp=20dB(TYP.) @f=1.9GHz
● High power added efficiency
   hadd=45%(TYP.) @f=1.9GHz,Pin=8dBm
● Hermetic Package

APPLICATION
● For UHF Band power amplifiers