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K9F2G08R0A 데이터시트 - Samsung

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K9F2G08R0A

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Samsung
Samsung Samsung

GENERAL DESCRIPTION
Offered in 256Mx8bit, the K9F2G08X0A is a 2G-bit NAND Flash Memory with spare 64M-bit. Its NAND cell provides the most cost effective solution for the solid state application market. A program operation can be performed in typical 200µs on the (2K+64)Byte page and an erase operation can be performed in typical 1.5ms on a (128K+4K)Byte block. Data in the data register can be read out at 25ns(42ns with 1.8V device) cycle time per Byte. The I/O pins serve as the ports for address and data input/output as well as command input. The on-chip write controller automates all program and erase functions including pulse repetition, where required, and internal verification and margining of data. Even the write-intensive systems can take advantage of the K9F2G08X0A′s extended reliability of 100K program/erase cycles by providing ECC(Error Correcting Code) with real time mapping-out algorithm. The K9F2G08X0A is an optimum solution for large nonvolatile storage applications such as solid state file storage and other portable applications requiring non-volatility.


FEATURES
• Voltage Supply
- 1.65V ~ 1.95V
- 2.70V ~ 3.60V
• Organization
- Memory Cell Array : (256M + 8M) x 8bit
- Data Register : (2K + 64) x 8bit
• Automatic Program and Erase
- Page Program : (2K + 64)Byte
- Block Erase : (128K + 4K)Byte
• Page Read Operation
- Page Size : (2K + 64)Byte
- Random Read : 25µs(Max.)
- Serial Access : 25ns(Min.)
(*K9F2G08R0A: tRC = 42ns(Min))
• Fast Write Cycle Time
- Page Program time : 200µs(Typ.)
- Block Erase Time : 1.5ms(Typ.)
• Command/Address/Data Multiplexed I/O Port
• Hardware Data Protection
- Program/Erase Lockout During Power Transitions
• Reliable CMOS Floating-Gate Technology
-Endurance : 100K Program/Erase Cycles(with 1bit/512Byte
ECC)
- Data Retention : 10 Years
• Command Driven Operation
• Intelligent Copy-Back with internal 1bit/528Byte EDC
• Unique ID for Copyright Protection
• Package :
- K9F2G08R0A-JCB0/JIB0 : Pb-FREE PACKAGE
   63 - Ball FBGA I (10 x 13 / 0.8 mm pitch)
- K9F2G08U0A-PCB0/PIB0 : Pb-FREE PACKAGE
   48 - Pin TSOP I (12 x 20 / 0.5 mm pitch)
- K9F2G08U0A-ICB0/IIB0
   52 - Pin ULGA (12 x 17 / 1.00 mm pitch)

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제조사
256M x 8 Bit NAND Flash Memory
Samsung
256M x 8 Bit NAND Flash Memory
Samsung
256M x 8 Bit / 128M x 16 Bit NAND Flash Memory
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2 Gbit (256M x 8) 3.3V NAND Flash Memory
[Elite Semiconductor Memory Technology Inc.
2 Gbit (256M x 8) 3.3V NAND Flash Memory
[Elite Semiconductor Memory Technology Inc.
2 Gbit (256M x 8) 3.3V NAND Flash Memory
[Elite Semiconductor Memory Technology Inc.
2 Gbit (256M x 8) 1.8V NAND Flash Memory
[Elite Semiconductor Memory Technology Inc.
2 Gbit (256M x 8) 1.8V NAND Flash Memory
[Elite Semiconductor Memory Technology Inc.
64M x 8 Bit NAND Flash Memory
Samsung
64M x 8 Bit NAND Flash Memory
Samsung

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