K9F2G08R0A 데이터 시트보기 (PDF) - Samsung

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K9F2G08R0A

256M x 8 Bit NAND Flash Memory

Samsung 

K9F2G08R0A

K9F2G08U0A

256M x 8 Bit NAND Flash Memory

PRODUCT LIST

Part Number

K9F2G08R0A-J

K9F2G08U0A-P

K9F2G08U0A-I

Vcc Range

1.65 ~ 1.95V

2.70 ~ 3.60V

FLASH MEMORY

Organization

X8

PKG Type

FBGA

TSOP1

52ULGA

FEATURES

• Voltage Supply

- 1.65V ~ 1.95V

- 2.70V ~ 3.60V

• Organization

- Memory Cell Array : (256M + 8M) x 8bit

- Data Register : (2K + 64) x 8bit

• Automatic Program and Erase

- Page Program : (2K + 64)Byte

- Block Erase : (128K + 4K)Byte

• Page Read Operation

- Page Size : (2K + 64)Byte

- Random Read : 25µs(Max.)

- Serial Access : 25ns(Min.)

(*K9F2G08R0A: tRC = 42ns(Min))

• Fast Write Cycle Time

- Page Program time : 200µs(Typ.)

- Block Erase Time : 1.5ms(Typ.)

• Command/Address/Data Multiplexed I/O Port

• Hardware Data Protection

- Program/Erase Lockout During Power Transitions

• Reliable CMOS Floating-Gate Technology

-Endurance : 100K Program/Erase Cycles(with 1bit/512Byte

ECC)

- Data Retention : 10 Years

• Command Driven Operation

• Intelligent Copy-Back with internal 1bit/528Byte EDC

• Unique ID for Copyright Protection

• Package :

- K9F2G08R0A-JCB0/JIB0 : Pb-FREE PACKAGE

63 - Ball FBGA I (10 x 13 / 0.8 mm pitch)

- K9F2G08U0A-PCB0/PIB0 : Pb-FREE PACKAGE

48 - Pin TSOP I (12 x 20 / 0.5 mm pitch)

- K9F2G08U0A-ICB0/IIB0

52 - Pin ULGA (12 x 17 / 1.00 mm pitch)

GENERAL DESCRIPTION

Offered in 256Mx8bit, the K9F2G08X0A is a 2G-bit NAND Flash Memory with spare 64M-bit. Its NAND cell provides the most cost-

effective solution for the solid state application market. A program operation can be performed in typical 200µs on the (2K+64)Byte

page and an erase operation can be performed in typical 1.5ms on a (128K+4K)Byte block. Data in the data register can be read out

at 25ns(42ns with 1.8V device) cycle time per Byte. The I/O pins serve as the ports for address and data input/output as well as com-

mand input. The on-chip write controller automates all program and erase functions including pulse repetition, where required, and

internal verification and margining of data. Even the write-intensive systems can take advantage of the K9F2G08X0A′s extended reli-

ability of 100K program/erase cycles by providing ECC(Error Correcting Code) with real time mapping-out algorithm. The

K9F2G08X0A is an optimum solution for large nonvolatile storage applications such as solid state file storage and other portable

applications requiring non-volatility.

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