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전자부품 반도체 검색엔진( 무료 PDF 다운로드 ) - 데이터시트뱅크
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K80E08K3 데이터시트 - Toshiba

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K80E08K3

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TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (U−MOSⅣ)

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„ E-Bike/UPS/Inverter

* Low drain−source ON resistance  : RDS (ON)= 7.5 mΩ(typ.)

* High forward transfer admittance  : |Yfs| = 135 S (typ.)

* Low leakage current  : IDSS= 10 µA (max) (VDS= 75 V)

* Enhancement mode  : Vth= 2.0~4.0 V (VDS= 10 V, ID= 1 mA)

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