K80E08K3 데이터 시트보기 (PDF) - Toshiba
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K80E08K3 Datasheet PDF : 3 Pages
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Target Specification
TK80E08K3
TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (U−MOSⅣ)
TK80E08K3
E-Bike/UPS/Inverter
Low drain−source ON resistance : RDS (ON) = 7.5 mΩ (typ.)
High forward transfer admittance : |Yfs| = 135 S (typ.)
Low leakage current
: IDSS = 10 µA (max) (VDS = 75 V)
Enhancement mode
: Vth = 2.0~4.0 V (VDS = 10 V, ID = 1 mA)
Unit: mm
Absolute Maximum Ratings (Ta = 25°C)
Characteristics
Symbol
Rating
Unit
Drain−source voltage
Drain−gate voltage (RGS = 20 kΩ)
Gate−source voltage
DC (Note 1)
Drain current
DC (Note 1,4)
Pulse (Note 1)
Drain power dissipation (Tc = 25°C)
Single pulse avalanche energy
(Note 2)
Avalanche current
Repetitive avalanche energy (Note 3)
Peak diode recovery dv/dt (Note 5)
Channel temperature (Note 4)
Storage temperature range (Note 4)
VDSS
VDGR
VGSS
ID
ID
IDP
PD
EAS
IAR
EAR
dv/dt
Tch
Tstg
75
75
±20
80
70
240
200
107
40
20
12
175
−55~175
V
V
V
A
A
A
W
mJ
A
mJ
V/ns
°C
°C
JEDEC
TO-220AB
JEITA
SC-46
TOSHIBA
Weight: 1.9 g (typ.)
Note :Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significa2nt change in
temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e.
operating temperature/current/voltage, etc.) are within the absolute maximum ratings.
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor R1 eliability Handbook (“Handling
Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test report and estimated
failure rate, etc).Thermal Characteristics
Characteristics
Symbol
Max
Unit
3
Thermal resistance, channel to case
Rth (ch−c)
0.75
°C / W
Thermal resistance, channel to
ambient
Rth (ch−a)
83.3
°C / W
Note 1: Ensure that the channel temperature does not exceed 175°C.
Note 2: VDD = 25 V, Tch = 25°C (initial), L = 100 µH, RG = 25 Ω, IAR = 40A
Note 3: Repetitive rating: pulse width limited by maximum channel temperature
Note 4: Tc=100℃
Note 5: IDR≦80A,di/dt≦160A/µs, Tch≦Tch max.
This transistor is an electrostatic-sensitive device.
Please handle with caution.
1
2009-4-2
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