DESCRIPTION
The 4 Meg NLF/NVF product family feature high-speed, low-power synchronous static RAMs designed to provide a burstable, high-performance, no wait state, device for networking and communications applications. They are organized as 128K words by 36 bits and 256K words by 18 bits, fabricated with ISSIs advanced CMOS technology.

FEATURES
• 100 percent bus utilization
• No wait cycles between Read and Write
• Internal self-timed write cycle
• Individual Byte Write Control
• Single Read/Write control pin
• Clock controlled, registered address, data and control
• Interleaved or linear burst sequence control using MODE input
• Three chip enables for simple depth expansion and address pipelining
• Power Down mode
• Common data inputs and data outputs
• CKE pin to enable clock and suspend operation
• JEDEC 100-pin TQFP, 119-ball PBGA, and 165-ball PBGA packages
• Power supply: NVF: VDD 2.5V (± 5%), VDDQ 2.5V (± 5%) NLF: VDD 3.3V (± 5%), VDDQ 3.3V/2.5V (± 5%)
• Industrial temperature available
• Lead-free available