This advanced power MOSFET is designed, tested, and guaranteed to withstand a specified level of energy in the breakdown avalanche mode of operation. It is a P-Channel enhancement mode silicon-gate power field effect transistor designed for applications such as switching regulators,
switching convertors, motor drivers, relay drivers, and drivers for high power bipolar switching transistors requiring high speed and low gate drive power. These types can be operated directly from integrated circuits. The P-Channel IRFP9150 is an approximate electrical complement to the N-channel IRFP150.

FEATUREs
• 25A, 100V
•rDS(ON)= 0.150Ω
• Single Pulse Avalanche Energy Rated
• SOA is Power Dissipation Limited
• Nanosecond Switching Speeds
• Linear Transfer Characteristics
• High Input Impedance