IRFP9150 데이터 시트보기 (PDF) - Intersil

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IRFP9150

25A, 100V, 0.150 Ohm, P-Channel Power MOSFET

Intersil 

IRFP9150

Typical Performance Curves Unless Otherwise Specified (Continued)

1.25

ID = 250µA

1.15

1.05

0.95

0.85

0.75

-40

0

40

80

120

160

TJ, JUNCTION TEMPERATURE (oC)

FIGURE 10. NORMALIZED DRAIN TO SOURCE BREAKDOWN

VOLTAGE vs JUNCTION TEMPERATURE

4500

4000

3500

3000

2500

2000

1500

1000

500

0

VGS = 0V, f = 1MHz

CISS = CGS + CGD

CRSS = CGD

COSS ≈ CDS + CGD

CISS

COSS

CRSS

-10

-20

-30

-40

-50

VDS, DRAIN TO SOURCE VOLTAGE (V)

FIGURE 11. CAPACITANCE vs DRAIN TO SOURCE VOLTAGE

15

PULSE DURATION = 80µs

DUTY CYCLE = 0.5% MAX

12

9

25oC

150oC

6

3

0

-10

-20

-30

-40

-50

ID, DRAIN CURRENT (A)

FIGURE 12. TRANSCONDUCTANCE vs DRAIN CURRENT

100

PULSE DURATION = 80µs

DUTY CYCLE = 0.5% MAX

10

150oC

1

25oC

0.1

0.3

0.5

0.7

0.9

1.1

1.3

1.5

1.7

VSD, SOURCE TO DRAIN VOLTAGE (V)

FIGURE 13. SOURCE TO DRAIN DIODE VOLTAGE

0

ID = -25A

-5

VDS = -80V

-10

VDS = -50V

-15

VDS = -20V

-20

0

20 40 60 80 100 120 140 160 180

Qg(TOT), TOTAL GATE CHARGE (nC)

FIGURE 14. GATE TO SOURCE VOLTAGE vs GATE CHARGE

4-67

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