IRFM120A 데이터시트 - Kersemi Electronic Co., Ltd.
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IRFM120A
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Kersemi Electronic Co., Ltd.
FEATURES
❐ Avalanche Rugged Technology
❐ Rugged Gate Oxide Technology
❐ Lower Input Capacitance
❐ Improved Gate Charge
❐ Extended Safe Operating Area
❐ Lower Leakage Current : 10 μA (Max.) @ VDS = 100V
❐ Lower RDS(ON) : 0.155 Ω (Typ.)
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