IRFM120A 데이터 시트보기 (PDF) - Kersemi Electronic Co., Ltd.
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IRFM120A Datasheet PDF : 6 Pages
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IRFM120A
Electrical Characteristics (TA=25% unless otherwise specified)
Symbol
BVDSS
.BV/.TJ
VGS(th)
IGSS
IDSS
Characteristic
Min. Typ. Max. Units
Test Condition
Drain-Source Breakdown Voltage
Breakdown Voltage Temp. Coeff.
Gate Threshold Voltage
Gate-Source Leakage , Forward
Gate-Source Leakage , Reverse
Drain-to-Source Leakage Current
100 -- -- V
-- 0.12 -- V/%
2.0 -- 4.0 V
-- -- 100 nA
-- -- -100
-- -- 1
-- -- 10 #A
-- -- 100
VGS=0V,ID=250#A
ID=250#A See Fig 7
VDS=5V,ID=250#A
VGS=20V
VGS=-20V
VDS=30V
-
VDS=100V
VDS=80V,TA=125%
RDS(on)
gfs
Ciss
Coss
Crss
td(on)
tr
td(off)
tf
Qg
Qgs
Qgd
Static Drain-Source
On-State Resistance
Forward Transconductance
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Total Gate Charge
Gate-Source Charge
Gate-Drain(“Miller”) Charge
-- -- 0.2 ) VGS=10V,ID=1.15A
+
-- 3.12 -- S VDS=40V,ID=1.15A +
-- 370 480
-- 95 110 pF VGS=0V,VDS=25V,f =1MHz
See Fig 5
-- 38 45
-- 14 40
--
--
14
36
40
90
VDD=50V,ID=9.2A,
ns RG=18)
See Fig 13 + ,
-- 28 70
-- 16 22
VDS=80V,VGS=10V,
-- 2.7 -- nC ID=9.2A
-- 7.8 --
See Fig 6 & Fig 12 + ,
Source-Drain Diode Ratings and Characteristics
Symbol
IS
ISM
VSD
trr
Qrr
Characteristic
Continuous Source Current
Pulsed-Source Current
Diode Forward Voltage
Reverse Recovery Time
Reverse Recovery Charge
Min. Typ. Max. Units
Test Condition
--
& --
-- 2.3
-- 18
Integral reverse pn-diode
A
in the MOSFET
+ -- -- 1.5 V TJ=25%,IS=2.3A,VGS=0V
-- 98 -- ns TJ=25%,IF=9.2A
-- 0.34 -- #C diF/dt=100A/#s
+
Notes ;
& Repetitive Rating : Pulse Width Limited by Maximum Junction Temperature
' L=35mH, IAS=2.3A, VDD=25V, RG=27), Starting TJ =25%
( ISD*9.2A, di/dt*300A/#s, VDD*BVDSS , Starting TJ =25%
+ Pulse Test : Pulse Width = 250#s, Duty Cycle * 2%
, Essentially Independent of Operating Temperature
- Adjusted for Cisco
2014-8-8
2
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