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HYS64V16220GU 데이터시트 - Siemens AG

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HYS64V16220GU

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Siemens
Siemens AG Siemens

3.3 V 8M × 64/72-Bit 1 Bank SDRAM Module
3.3 V 16M × 64/72-Bit 2 Bank SDRAM Module
168 pin unbuffered DIMM Modules

The HYS 64(72)8200 and HYS 64(72)16220 are industry standard 168-pin 8-byte Dual in-line Memory Modules (DIMMs) which are organized as 8M × 64, 8M × 72 in 1 bank and 16M × 64 and 16M × 72 in two banks high speed memory arrays designed with 64M Synchronous DRAMs (SDRAMs) for non-parity and ECC applications. The DIMMs use -8 and -8B speed sort 8M 8 SDRAM devices in TSOP-54 packages to meet the PC100 requirement. Modules which use -10 parts are suitable for PC66 applications only. Decoupling capacitors are mounted on the PC board. The PC board design is according to INTEL’s PC SDRAM Rev. 1.0 module specification.

• 168 Pin PC100-compatible unbuffered 8 Byte Dual-In-Line SDRAM Modules for PC main memory applications
• 1 bank 8M × 64, 8M × 72 and 2 bank 16M × 64, 16M × 72 organization
• Optimized for byte-write non-parity or ECC applications
• JEDEC standard Synchronous DRAMs (SDRAM)
• Fully PC board layout compatible to INTEL’s Rev. 1.0 module specification
• Single + 3.3 V (± 0.3 V ) power supply
• Programmable CAS Latency, Burst Length and Wrap Sequence (Sequential & Interleave)
• Auto Refresh (CBR) and Self Refresh
• Decoupling capacitors mounted on substrate
• All inputs, outputs are LVTTL compatible
• Serial Presence Detect with E2PROM
• Utilizes 8M × 8 SDRAMs in TSOPII-54 packages
• 4096 refresh cycles every 64 ms
• 133.35 mm × 31.75 mm × 4.00 mm card size with gold contact pads

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3.3 V 8M × 64/72-Bit 1 Bank SDRAM Module, 3.3 V 16M × 64/72-Bit 2 Bank SDRAM Module
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3.3V 2M x 64/72-Bit 1 BANK SDRAM Module 3.3V 4M x 64/72-Bit 2 BANK SDRAM Module
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3.3V 8M x 64-Bit SDRAM Module 3.3V 8M x 72-Bit SDRAM Module
Siemens AG
3.3V 8M x 64-Bit SDRAM Module 3.3V 8M x 72-Bit SDRAM Module
Infineon Technologies
3.3V 4M x 64-Bit 2 BANK SDRAM Module 3.3V 4M x 72-Bit 2 BANK SDRAM Module 168 pin unbuffered DIMM Modules
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1M x 64/72 SDRAM-Module
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