General Description
The HMC327MS8G & HMC327MS8GE are high efficiency GaAs InGaP Heterojunction Bipolar Transistor (HBT) MMIC Power amplifi ers which operate between 3.0 and 4.0 GHz. The amplifi er is packaged in a low cost, surface mount 8 leaded package with an exposed base for improved RF and thermal performance. With a minimum of external components, the amplifier provides 21 dB of gain, +30 dBm of saturated power at 45% PAE from a +5.0V supply voltage. Power down capability is available to conserve current consumption when the amplifier is not in use.

FEATUREs
   Gain: 21 dB
   Saturated Power: +30 dBm
   45% PAE
   Supply Voltage: +5.0 V
   Power Down Capability
   Low External Part Count

Typical Applications
This amplifier is ideal for use as a power
amplifier for 3.3 - 3.6 GHz applications:
• Wireless Local Loop