General Description
The HMC324MS8G is a high effi ciency GaAs InGaP Heterojunction Bipolar Transistor (HBT) MMIC amplifi er that contains two non-connected amplifi ers in parallel inside an 8 lead MSOPG package. When used in conjunction with an external balun, the outputs of the amplifier can be combined to reduce the 2nd harmonic distortion that is generated by the amplifier. With Vcc at +7.5V, the HMC324MS8G offers 13 dB of gain and with power combining and harmonic cancellation, +24 dBm of output power can be achieved. Using a Darlington feedback pair results in reduced sensitivity to normal process variations and provides a good 50-ohm input/output port match. This amplifier is ideal for RF systems where high linearity is required and can operate in 50-ohm and 75-ohm systems.

FEATUREs
   P1dB Output Power: +16 dBm
   Output IP3: +30 dBm
   Gain: 13 dB
   Single Supply: 8.75V
   Ultra Small Package: MSOP8G

Typical Applications
This Amplifier is ideal for RF Systems
where high linearity is required such as:
• CATV Head-End and Modem
• Cellular & Base Stations
• MMDS
• WirelessLAN