Functional Description
The FM24C16B is a 16-Kbit nonvolatile memory employing an advanced ferroelectric process. A ferroelectric random access memory or F-RAM is nonvolatile and performs reads and writes similar to a RAM. It provides reliable data retention for 151 years while eliminating the complexities, overhead, and system-level reliability problems caused by EEPROM and other nonvolatile memories.

FEATUREs
■16-Kbit ferroelectric random access memory (F-RAM) logically organized as 2 K × 8
❐High-endurance 100 trillion (1014) read/writes
❐151-year data retention (See the Data Retention and Endurancetable)
❐NoDelay™ writes
❐Advanced high-reliability ferroelectric process
■Fast 2-wire Serial interface (I2C)
❐Up to 1-MHz frequency
❐Direct hardware replacement for serial (I2C) EEPROM
❐Supports legacy timings for 100 kHz and 400 kHz
■Low power consumption
❐100 A active current at 100 kHz
❐4 A (typ) standby current
■Voltage operation: VDD= 4.5 V to 5.5 V
■Industrial temperature: –40 C to +85 C
■8-pin small outline integrated circuit (SOIC) package
■Restriction of hazardous substances (RoHS) compliant