Functional Overview
The FM21L16 is a 128 K × 16 nonvolatile memory that reads and writes similar to a standard SRAM. A ferroelectric random access memory or F-RAM is nonvolatile, which means that data is retained after power is removed. It provides data retention for over 151 years while eliminating the reliability concerns, functional disadvantages, and system design complexities of battery-backed SRAM (BBSRAM). Fast write timing and high write endurance make the F-RAM superior to other types of memory.

FEATUREs
■ 2-Mbit ferroelectric random access memory (F-RAM) logically
   organized as 128 K × 16
   ❐ Configurable as 256 K × 8 using UB and LB
   ❐ High-endurance 100 trillion (1014) read/writes
   ❐ 151-year data retention (see the Data Retention and
      Endurance table)
   ❐ NoDelay™ writes
   ❐ Page mode operation to 30-ns cycle time
   ❐ Advanced high-reliability ferroelectric process
■ SRAM compatible
   ❐ Industry-standard 128 K × 16 SRAM pinout
   ❐ 60-ns access time, 110-ns cycle time
■ Advanced features
   ❐ Software-programmable block write-protect
■ Superior to battery-backed SRAM modules
   ❐ No battery concerns
   ❐ Monolithic reliability
   ❐ True surface mount solution, no rework steps
   ❐ Superior for moisture, shock, and vibration
■ Low power consumption
   ❐ Active current 8 mA (typ)
   ❐ Standby current 90 μA (typ)
   ❐ Sleep mode current 5 μA (max)
■ Low-voltage operation: VDD = 2.7 V to 3.6 V
■ Industrial temperature: –40 °C to +85 °C
■ 44-pin thin small outline package (TSOP) Type II
■ Restriction of hazardous substances (RoHS) comp