DESCRIPTION
Dual push-pull silicon N-channel enhancement mode vertical D-MOS transistor, designed for large signal amplifier applications in the VHF frequency range.
The transistor is encapsulated in a 4-lead SOT262 A1 balanced flange envelope, with two ceramic caps. The mounting flange provides the common source connection for the transistors.

FEATURES
• High power gain
• Easy power control
• Good thermal stability
• Gold metallization ensures excellent reliability.