DESCRIPTION
Dual push-pull silicon N-channel enhancement mode vertical D-MOS transistor designed for large signal amplifier applications in the VHF frequency range.
The transistor is encapsulated in a 4-lead, SOT279A balanced flange package, with a ceramic cap. The mounting flange provides the common source connection for the transistors.
FEATURES
• High power gain
• Easy power control
• Good thermal stability
• Gold metallization ensures excellent reliability.