General description
NPN silicon germanium microwave transistor for high speed, low noise applications in a plastic, 4-pin dual-emitter SOT343F package.

FEATUREs and benefits
■ Low noise high linearity RF transistor
■ High maximum output third-order intercept point 32 dBm at 1.8 GHz
■ 110 GHz fT silicon germanium technology

APPLICATIONs
■ Ka band oscillators DRO’s
■ High linearity applications
■ Medium output power applications
■ Wi-Fi / WLAN / WiMAX
■ GPS
■ ZigBee
■ SDARS first stage LNA
■ LTE, cellular, UMTS