General description
NPN silicon germanium microwave transistor for high speed, low noise applications in a SOT883C leadless ultra small plastic SMD package.

FEATUREs and benefits
■ Leadless ultra small plastic SMD package 1.0 mm  0.6 mm  0.34 mm
■ Low noise high gain microwave transistor
■ Noise figure (NF) = 0.75 dB at 6 GHz
■ High maximum power gain (Gp(max)) of 15.8 dB at 6 GHz
■ Excellent linearity in WiFi LNA from 5 GHz to 5.9 GHz:
   ◆ input third-order intercept point (IP3i) = 15 dBm
   ◆ input power at 1 dB gain compression (Pi(1dB)) = 0 dBm
   See application note AN11224: Low Noise Fast Turn ON/OFF 5-5.9GHz WiFi LNA with
   BFU730LX.
■ 110 GHz fT silicon germanium technology

APPLICATIONs
■ Wi-Fi / WLAN
   See application notes:
   ◆ AN11223: Low Noise Fast Turn ON/OFF 2.4-2.5GHz WiFi LNA with BFU730LX
   ◆ AN11224: Low Noise Fast Turn ON/OFF 5-5.9GHz WiFi LNA with BFU730LX
■ WiMAX
■ LNA for GPS, GLONASS, Galileo and Compass (BeiDou)
■ DBS (2nd LNA stage, mixer stage, DRO), SDARS
■ RKE, AMR / Zigbee
■ LNA for microwave communications systems
■ Low current battery equipped applications
■ Microwave driver / buffer applications