Low Noise Silicon Bipolar RF Transistor

• For low noise, high-gain broadband amplifiers at collector currents from 2 mA to 30 mA
• fT = 8 GHz, NFmin = 0.9 dB at 900 MHz
• Two (galvanic) internal isolated Transistor in one package
• For orientation in reel see package information below
• Pb-free (RoHS compliant) and halogen-free package with visible leads
• Qualification report according to AEC-Q101 available