BFS483 데이터 시트보기 (PDF) - Infineon Technologies

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BFS483

Low Noise Silicon Bipolar RF Transistor

Infineon Technologies 

BFS483

Maximum Ratings at TA = 25 °C, unless otherwise specified

Parameter

Symbol

Value

Unit

Collector-emitter voltage

Collector-emitter voltage

Collector-base voltage

Emitter-base voltage

Collector current

Base current

Total power dissipation1)

TS ≤ 40 °C

Junction temperature

Ambient temperature

Storage temperature

VCEO

VCES

VCBO

VEBO

IC

IB

Ptot

TJ

TA

TStg

12

V

20

20

2

65

mA

5

450

mW

150

°C

-65 ... 150

-65 ... 150

Thermal Resistance

Parameter

Junction - soldering point2)

Symbol

RthJS

Value

Unit

245

K/W

Electrical Characteristics at TA = 25 °C, unless otherwise specified

Parameter

Symbol

Values

Unit

min. typ. max.

DC Characteristics

Collector-emitter breakdown voltage

IC = 1 mA, IB = 0

Collector-emitter cutoff current

VCE = 20 V, VBE = 0

Collector-base cutoff current

VCB = 10 V, IE = 0

Emitter-base cutoff current

VEB = 1 V, IC = 0

DC current gain

IC = 15 mA, VCE = 8 V, pulse measured

V(BR)CEO 12

-

-V

ICES

-

- 100 µA

ICBO

-

- 100 nA

IEBO

-

-

1 µA

hFE

70 100 140 -

1TS is measured on the collector lead at the soldering point to the pcb

2For the definition of RthJS please refer to Application Note AN077 (Thermal Resistance Calculation)

2

2013-07-25

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