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전자부품 반도체 검색엔진( 무료 PDF 다운로드 ) - 데이터시트뱅크
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BFR843EL3 데이터시트 - Infineon Technologies

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부품명
BFR843EL3

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27 Pages

File Size
1.5 MB

제조사
Infineon
Infineon Technologies Infineon

Product Brief
The BFR843EL3 is a low noise broadband NPN bipolar RF transistor. Its integrated feedback provides a broadband pre-match to 50 Ω at input and output and improves the stability against parasitic oscillations. These measures simplify the design of arbitrary LNA application circuits. The device is based on Infineon’s reliable high volume silicon germanium carbon (SiGe:C) heterojunction bipolar technology. The collector design supports voltages up to VCEO = 2.25 V and currents up to IC = 55 mA. The device is especially suited for mobile applications in which low power consumption is a key requirement. The transistor is fitted with internal protection circuits, which enhance the robustness against electrostatic discharge (ESD) and against high levels of RF input power. The device is housed in a very small thin leadless plastic package, ideal for modules.


FEATUREs
• Low noise broadband NPN RF transistor based on
   Infineon´s reliable, high volume SiGe:C bipolar technology
• High maximum RF input power and ESD robustness
• Unique combination of high RF performance, robustness
   and ease of application circuit design
• Low noise figure: NFmin = 1 dB at 2.4 GHz
   and 1.15 dB at 5.5 GHz, 1.8 V, 8 mA
• High gain |S21|2 = 22 dB at 2.4 GHz
   and 16.5 dB at 5.5 GHz, 1.8 V, 15 mA
• OIP3 = 22 dBm at 2.4 GHz and 5.5 GHz, 1.8 V, 25 mA
• Ideal for low voltage applications e.g. VCC = 1.2 V
   and 1.8 V (2.85 V, 3.3 V, 3.6 V requires corresponding
   collector resistor)
• Low power consumption, ideal for mobile applications
• Pb-free (RoHS compliant) and halogen-free very small
   thin leadless plastic package


APPLICATIONs
As Low Noise Amplifier (LNA) in
• Wireless Communications: WLAN IEEE802.11b,g,n,a,ac single- and dual band applications, broadband LTE or WiMAX LNA
• Satellite navigation systems (e.g. GPS, GLONASS, COMPASS...) and satellite C-band LNB (1st and 2nd stage LNA)
• Broadband amplifiers: Dualband WLAN, multiband mobile phone, UWB up to 10 GHz
• ISM bands up to 10 GHz
• Dedicated short range communication (DSRC) systems: WLAN IEEE802.11p


부품명
상세내역
PDF
제조사
Robust Low Noise Silicon Germanium Bipolar RF Transistor ( Rev : 2012 )
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Robust High Performance Low Noise Bipolar RF Transistor
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Robust Low Noise Silicon Germanium Bipolar RF Transistor
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Robust High Performance Low Noise Bipolar RF Transistor ( Rev : 2010 )
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Robust High Performance Low Noise Bipolar RF Transistor ( Rev : 2010 )
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Low Noise Silicon Bipolar RF Transistor
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Low Noise Silicon Bipolar RF Transistor
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Low Noise Silicon Bipolar RF Transistor
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Low Noise Silicon Bipolar RF Transistor
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