Product description
• NPN silicon planar epitaxial transistor in 4-pin dual-emitter SOT343 package for low noise and low distortion wideband amplifiers. This RF transistor benefits from Infineon long-term experience in RF components and combines ease-of-use to stable volumes production, at benchmark quality and reliability.

FEATUREs
• For high voltage applications VCE < 12 V
• Maximal power Ptot = 700 mW
• Transition frequency fT = 7.5 GHz
• Noise figure NFmin = 1.3 dB at 900 MHz
• Easy to use Pb-free (RoHS compliant) and halogen-free industry
   standard SOT343 package with visible leads

APPLICATION
• GNSS active antenna
• Amplifiers in antenna and telecommunications systems
• CATV
• Power amplifier for DECT and PCN systems