A1977 데이터시트 - Renesas Electronics
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A1977
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14 Pages
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Renesas Electronics
FEATURES
• High fT
fT = 8.5 GHz TYP.
• High gain
| S21e | 2 = 12.0 dB TYP. @f = 1.0 GHz, VCE = −8 V, IC = −20 mA
• High-speed switching characterstics
• Equivalent NPN transistor is the 2SC3583.
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제조사
MICROWAVE LOW NOISE AMPLIFIER NPN SILICON EPITAXIAL TRANSISTOR
NEC => Renesas Technology
MICROWAVE LOW NOISE AMPLIFIER NPN SILICON EPITAXIAL TRANSISTOR
NEC => Renesas Technology
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