DESCRIPTION
The 2SC3583 is an NPN epitaxial silicon transistor designed for use in low-noise and small signal amplifiers from VHF band to UHF band. Low noise figure, high gain, and high current capability achieve a very wide
dynamic range and excellent linearity. This is achieved by direct nitride passivated base surface process (DNP process) which is an NEC proprietary new fabrication technique.

FEATURES
• NF 1.2 dB TYP. @f = 1.0 GHz
• Ga 13 dB TYP. @f = 1.0 GHz