DESCRIPTION
The AM82731-006 device is a medium power silicon bipolar NPN transistor specifically designed for S-Band radar pulsed driver applications.

■ REFRACTORY/GOLD METALLIZATION
■ EMITTER SITE BALLASTED
■ 5:1 VSWR CAPABILITY
■ LOW THERMAL RESISTANCE
■ INPUT/OUTPUT IMPEDANCE MATCHING
■ OVERLAY GEOMETRY
■ METAL/CERAMIC HERMETIC PACKAGE
■ POUT = 5.5 W. MIN. WITH 5.6 dB GAIN
■ BANDWIDTH = 400 MHz