DESCRIPTION
The AM82731-025 device is a high power silicon bipolar NPNtransistor specifically designed forS-Band radar pulsed output and driver applications.

■ LOW PARASITIC, DOUBLE LEVEL METAL DESIGN
■ REFRACTORY/GOLD METALLIZATION
■ EMITTER SITE BALLASTED
■ 3:1 VSWR @ 1 dB OVERDRIVE
■ LOW RF THERMAL RESISTANCE
■ INPUT/OUTPUT IMPEDANCE MATCHING
■ OVERLAY GEOMETRY
■ METAL/CERAMIC HERMETIC PACKAGE
■ POUT = 25 W MIN. WITH 6.2 dB GAIN