MOSFET – Power, N-Channel, Ultrafet 100 V, 56 A, 25 mΩ

These N−Channel power MOSFETs are manufactured using the innovative Ultrafet process. This advanced process technology achieves the lowest possible on− resistance per silicon area, resulting in outstanding performance. This device is capable of withstanding high energy in the avalanche mode and the diode exhibits very low reverse recovery time and stored charge. It was designed for use in applications where power efficiency is important, such as switching regulators, switching converters, motor drivers, relay drivers, low−voltage bus switches, and power management in portable and battery− operated products.
Formerly developmental type TA75639.

FEATUREs
• 56 A, 100 V
• Simulation Models
   ♦ Temperature Compensated PSPICE® and SABER™ Electrical
      Models
   ♦ Spice and Saber Thermal Impedance Models
   ♦ www.onsemi.com
• Peak Current vs Pulse Width Curve
• UIS Rating Curve
• Related Literature
   ♦ TB334, “Guidelines for Soldering Surface Mount Components to
      PC Boards”
• These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS
   Compliant