Description
• This N-channel power MOSFET is produced using Fairchild Semiconductor’s innovative UItraFET process. This advanced process technology achieves the lowest possible on-resistance per silicon area, resulting in outstanding performance. This device is capable of withstanding high energy in the avalanche mode and the diode exhibits very low reverse recovery time and stored change. It was designed for use in applications where power efficiency is important, such as switching regulators, switching converters, motro drives, relay drivers, low-voltage bus switches, and power management in portable and battery-operated products.

FEATUREs
• RDS(on) = 6.5mΩ ( Typ.)@ VGS = 10V, ID = 75A
• RoHS compliant